The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1986
Filed:
Nov. 18, 1977
Hitachi, Ltd., Tokyo, JP;
Abstract
An I.sup.2 L device is disclosed wherein the P type injector region of a PNP transistor is formed so as to be buried in an N.sup.- type epitaxial layer below the P type collector region of the PNP transistor, whereby the carrier injection efficiency of the transistor is improved and a high switching speed is obtained. The I.sup.2 L device further includes an inversed NPN transistor wherein the abovementioned P type collector region of the PNP transistor works as a base region of the NPN transistor, an N type collector region is formed in the P type base region, and the abovementioned P type injector region extends between the N.sup.- type epitaxial layer and an N.sup.+ type substrate except below the N type collector region so that the effective emitter portion of the NPN transistor is limited to a specific area immediately below the N type collector region, thereby to reduce the power consumption.