The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 1986

Filed:

Jan. 18, 1985
Applicant:
Inventors:

David N Jewett, Harvard, MA (US);

Herbert E Bates, Ashby, MA (US);

Joseph B Milstein, Denver, CO (US);

Assignee:

Energy Materials Corporation, So. Lancaster, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ;
Abstract

In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.


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