The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1986
Filed:
Feb. 21, 1985
Applicant:
Inventors:
Akito Nishitani, Tokyo, JP;
Yoshiaki Katakura, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 29571 ; 2957 / ; 29580 ; 148187 ; 156651 ; 156653 ; 156657 ; 156662 ; 357 41 ; 357 91 ;
Abstract
An LDD MIS structure without a lightly-doped source region can be formed by the use of the conventional self-alignment technique. The structure includes in a silicon substrate a gate region, a heavily-doped drain region, a heavily-doped source region, and a lightly doped drain region. The gate region consists of a gate electrode and a side-wall spacer. The lightly-doped drain region is formed under the side-wall spacer, and in the silicon substrate.