The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1986
Filed:
Apr. 02, 1985
John L Freeouf, Peekskill, NY (US);
Thomas N Jackson, Ossining, NY (US);
Peter Oelhafen, Basel, CH;
George D Pettit, Mahopac, NY (US);
Jerry M Woodall, Bedford Hills, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.