The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1986
Filed:
Nov. 23, 1984
Kenneth Kawakami, Sunnyvale, CA (US);
Microwave Technology, Inc., Fremont, CA (US);
Abstract
A series biasing arrangement for a pair of junction field effect transistors (JFETs), which may be used in RF amplifiers, mixers or oscillators, comprises connecting the JFETs together in series, with the gates of the two JFETs selectively connected to different reference potentials. The first FET is also connected to the DC voltage source. In one embodiment of the invention, two operational amplifiers, whose output leads are connected to the gates of corresponding JFETs have their noninverting input leads connected to selected points on a voltage divider made up of three resistors and their inverting input leads each connected to the source of a corresponding JFET. The drain to source voltage drops across the JFETs are controlled solely by the values of two of the resistors in the three resistor voltage divider. The bias current through the series-connected JFETs can be controlled independently of the drain to source voltage drops across each of the JFETs. The two FETs need not be closely matched.