The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 1986
Filed:
Aug. 29, 1984
Applicant:
Inventors:
Shintaro Miyazawa, Isehara, JP;
Shigeo Murai, Osaka, JP;
Assignees:
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 2957 / ; 148187 ; 148189 ; 148D / ;
Abstract
The quality of a compound semiconductor crystal such as gallium arsenide used for an integrated circuit is upgraded by a method comprising optionally forming a protective film on the obverse surface and reverse surface of a substrate consisting of a compound semiconductor crystal, subjecting the substrate to a heat treatment in an inert atmosphere at a temperature of at least the same as the activating temperature after the ion implantation into the substrate and then optionally revmoving the protective film.