The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1986
Filed:
Apr. 11, 1984
Applicant:
Inventors:
Kenji Iimura, Hitachi, JP;
Yoichi Nakashima, Ibaraki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 15 ; 357 53 ; 357 64 ; 357 89 ; 357 90 ;
Abstract
A high-speed diode with a PNN.sup.+ structure has a breakdown voltage of about 200 V, a forward voltage drop of 0.9 V or less, a reverse recovery time of 50 nsec or less, and a soft recovery characteristic, by making the impurity concentration in the surface of a P-layer equal to or less than 8.times.10.sup.18 atoms/cc, putting the thickness of the P-layer in a range from 2 to 6 .mu.m, putting the resistivity of an N-layer in a range from 5 to 12.OMEGA.-cm, putting the thickness of the N-layer in a range from 19 to 25 .mu.m, and putting the carrier lifetime in the N-layer in a range from 20 to 40 nsec.