The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1986
Filed:
Nov. 02, 1984
Michael S Adler, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
Fabrication of an integrated circuit containing complementary, dielectrically-isolated, high voltage semiconductor devices of the lateral-current conduction type involves doping of the voltage-supporting regions of the complementary devices in two steps, in accordance with Lateral Charge Control technology. A first conductivity type dopant is introduced into a semiconductor layer as it is being epitaxially grown, with the dopant concentration being below about 20 percent of the desired final doping concentration of the first conductivity type voltage-supporting region. Ion implantation of further first conductivity type dopant achieves final doping of the first conductivity type voltage-supporting region, while a separate ion implantation of a second conductivity dopant achieves final doping of the second conductivity type voltage-supporting region. For high current silicon devices having voltage-supporting regions thicker than about 5 microns, a fast-diffusing P-conductivity dopant, such as aluminum, forms the P-conductivity type voltage-supporting region for enhancing device current conduction capacity, particularly in bipolar devices, such as IGTs or bipolar transistors.