The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1986
Filed:
May. 09, 1983
Yoshinori Hayafuji, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the electron beam for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations.