The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1986
Filed:
May. 03, 1984
Eva A Ziem, Garland, TX (US);
Graydon B Larrabee, Dallas, TX (US);
David E Witter, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The disclosure relates to a method for producing single crystal silicon from a polycrystalline silicon melt wherein dopants such as oxygen and nitrogen are uniformly distributed in the crystal both along the crystal axis and radially therefrom. This is accomplished by identifying the correct species in the melt and above the melt and determining the thermochemical equilibrium between the two chemical species which lead to a change of the composition of the silicon single crystal during the entire growth process. This approach effectively circumvents the segregation coefficient during the growth process through the control of the concentration of the dopants in the melt.