The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1986
Filed:
Dec. 27, 1983
Michael D Morris, Ann Arbor, MI (US);
Tsuey I Chen, Ann Arbor, MI (US);
Board of Regents acting on behalf of University of Michigan, Ann Arbor, MI (US);
Abstract
A photothermal deflection detector for thin layer chromatography includes a translation means for holding and moving a thin layer chromatographic plate; a first impinging laser beam (e.g., 20 mW chopped argon laser) focused on the moveable thin layer chromatographic plate; a second probing laser beam (e.g., 2 mW He-Ne laser) intersecting the impinging laser beam directly above and parallel to the moveable thin layer chromatographic plate; and a laser deflection measuring means (e.g., knife edge, photodiode detector and lock-in amplifier demodulator) responsive to the thermal lens effect created by the absorption of the impinging laser beam by the separated compounds on the thin layer chromatographic plate. Such a system when applied to separated compounds (e.g., 1,2-napthaquinone, phenanthrenequinone and .alpha.-ionone) exhibits detection limits that range from 30 ng to 7.5 pg, depending upon the compounds's ability to absorb the impinging light.