The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1986
Filed:
Dec. 28, 1982
Daniel C Guterman, Plano, TX (US);
Thomson Components - Mostek Corporation, Carrollton, TX (US);
Abstract
A nonvolatile memory cell (16) is fabricated on a substrate (12) and includes a source region (46) and drain regions (48, 50 and 52). Step oxides (40, 42 and 44) are fabricated respectively over the regions (46, 48 and 52). A gate oxide (58) is formed between the step oxides (40 and 42). A thin oxide tunneling element (74) is fabricated between the step oxides (42, 44) and over the drain region (50). A floating gate (38) comprising a polysilicon layer is fabricated over the step oxides (40, 42, 44), the gate oxide (58) and the tunneling element (74). An insulation layer (36) is fabricated over the floating gate (38). Finally, a control gate (34) is fabricated over the insulating layer (36) to provide capacitive coupling to the floating gate (38). The nonvolatile memory cell (16) has enhanced capacitive coupling between the control gate (34) and the floating gate (38) while it has a minimum of capacitive coupling between the floating gate (38) and the source and drain regions (46, 48, 50, 52) in the substrate (12).