The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Jun. 12, 1985
Tsutomu Nakamura, Ina, JP;
Kazuya Matsumoto, Ina, JP;
Olympus Optical Co., Ltd., Tokyo, JP;
Abstract
A solid state image sensor including a number of pixels each of which has a source region, a drain region and a signal readout gate electrode having a portion formed between the source and drain regions, a light receiving gate electrode formed separately from the signal readout gate electrode, and a transfer gate electrode, the source and drain regions being formed in a surface of an epitaxial layer and the light receiving gate electrode, transfer gate electrode and signal readout gate electrode being formed on the epitaxial layer via a gate insulating film. After light signal charges have been stored underneath the light receiving gate electrode for a desired shutter open period in all pixels, the light signal charges are transferred into portions in the epitaxial layer underneath the signal readout gate electrodes via the transfer gate electrodes. Then, the light signal charges are successively readout by means of an XY address system to derive an output video signal.