The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Oct. 09, 1984
Applicant:
Inventor:
Manouchehr E Motamedi, Thousand Oaks, CA (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 235 ; 357 234 ; 357 2315 ; 357 26 ; 357 41 ; 357 59 ; 365185 ;
Abstract
A piezoelectric double diffusion MOS structure in which three gates are inserted in the CVD oxide element. These gates are overlapped layers of CVD polysilicon on top of the ZnO and are capacitively coupled to the silicon substrate. The charge is placed on the middle floating gate and is retained because of the oxide layers which separate the gates. A program erase, gate is provided for discharging the floating gate and to set the modes.