The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Dec. 21, 1984
Applicant:
Inventors:
Wadie N Khadder, Sunnyvale, CA (US);
Jia-Tarng Wang, Sunnyvale, CA (US);
Assignee:
Linear Technology Corporation, Milpitas, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148188 ; 148186 ; 148190 ;
Abstract
A process for doping a semiconductor material is performed during a deposition phase in a plurality of steps, first at a relatively low temperature to form a high concentration glass formation layer of the dopant on a semiconductor wafer at a high rate, and then raising the temperature slowly to provide an initial drive-in of the dopant. After etch removal of excess glass formation, the wafers are subjected to a base diffusion at an elevated temperature in an oxidizing atmosphere.