The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Apr. 27, 1984
Applicant:
Inventor:
Stanley M Vernon, Wellesley, MA (US);
Assignee:
Advanced Energy Fund Limited Partnership, Peterborough, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 29572 ; 2957 / ; 136261 ; 136262 ; 148 334 ; 148D / ; 148D / ; 148D / ; 148D / ; 156612 ; 156613 ; 357 16 ; 357 30 ; 357 61 ;
Abstract
Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.
Vernon, Stanley. (1986). Metal organic chemical vapor deposition of 111-v compounds on silicon (U.S. Patent No. 4588451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4588451
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile