The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1986
Filed:
Mar. 27, 1981
Joseph E Berthold, Stirling, NJ (US);
Adrian R Hartman, New Providence, NJ (US);
Terence J Riley, Wyomissing, PA (US);
Peter W Shackle, West Melborne, FL (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end. An n+ type gate region exists in a portion of the semiconductor body other than the portion which directly separates the anode and cathode regions. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an 'ON' and conducting state to an 'OFF' (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.