The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1986
Filed:
May. 27, 1982
Ryoichi Ohtani, Yokohama, JP;
Iwao Ohshima, Kawasaki, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A device for detecting metal ions in an atmosphere. The device is based on a well known insulated gate-type field-effect transistor (MOSFET). The device includes a metal ion detecting element based on the MOSFET; a means, connected to the metal ion detecting element, for making a current flow through said metal ion detecting element; and a means, connected to the metal ion detecting element, for detecting the change of the strength of the current flowing through the metal ion detecting element, the change being brought by the electric charge of the metal ions which reached the gate oxide film. A metal ion introducing passage for allowing migration of the metal ions to be detected to the gate oxide film is formed in the gate electrode of the metal ion detecting element in the direction of its thickness.