The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1986
Filed:
Apr. 29, 1985
Applicant:
Inventor:
Matsuro Koterasawa, Hachioji, JP;
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330268 ; 330274 ;
Abstract
A class AB monolithic silicon IC output stage is shown wherein the main output transistors are NPN structures. The current sourcing transistor is provided with an additional scaled down reference emitter and the two emitters connected to the inputs of an op amp which has its output coupled to drive the current sink transistor. The base of the current source transistor is driven from a high gain driver transistor stage which may also contain a d-c level shifter that permits the inclusion of a complementary current sink transistor that can greatly reduce cross-over distortion while conducting only quiescent current.