The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1986
Filed:
Feb. 10, 1983
Richard J Adler, Albuquerque, NM (US);
Mission Research Corporation, Santa Barbara, CA (US);
Abstract
Ion implantation devices in which the ion source is comprised of one or more vacuum spark gaps arranged to create a plasma and manipulated using magnetic fields are described. Each spark gap is comprised of a point electrode and a surface electrode with the plasma being generated from the surface electrode when a spark is initiated across the gap. A plurality of these spark gaps are coupled to a magnetically insulated ion diode. The spark gaps are arrayed around the azimuth of the ion diode so that plasma flows in and out of the diode along the lines of the magnetic field. The method of arraying the gaps results in an efficient, controllable, high density manner with extended pulse length. A second embodiment of these principles results in an advantageous implantation source using permanent magnets rather than grids. The spark gaps permit ion source versatility in that a wide variety of solid surfaces can be used as ion sources.