The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 1986

Filed:

Nov. 09, 1984
Applicant:
Inventors:

Bernard Munier, Seyssinet Pariset, FR;

Marc Arques, Grenoble, FR;

Assignee:

Thomson-CSF, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J / ;
U.S. Cl.
CPC ...
250338 ; 250370 ;
Abstract

In a device comprising N lines and M columns of infrared-sensitive photodiodes, the charges derived from the detectors of one column are integrated in a first series of capacitors. MOS transistors connect the first series of capacitors to a second series in order to produce a distribution of charges between these capacitors. MOS transistors mounted as emitter-followers read the level of charges within the second capacitors while integration of the charges takes place in the first capacitors of the detectors of the next column. The detectors and the remainder of the device are integrated on two different semiconductor substrates but the device as a whole is integrated in one cryostat having a single output.


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