The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1986
Filed:
Sep. 06, 1983
Max Koniger, Munich, DE;
Gerhard Muller, Eglharting, DE;
Abstract
An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.