The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1986
Filed:
Sep. 24, 1984
Applicant:
Inventor:
Ronald H Wilson, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427124 ; 2041 / ; 427 99 ; 427253 ; 427255 ; 4272557 ; 427404 ;
Abstract
Adherent deposits of tungsten are formed on receiving surfaces by preparing the receiving surface and thereafter forming a thin deposit of polycrystalline silicon on the surface. The surface and the deposited polycrystalline silicon is then exposed to a hydrogen containing tungsten fluoride gas at a suitable temperature to induce the adherent growth of tungsten film on the surface by reaction of the silicon with the tungsten fluoride gas. It is possible to form the polycrystalline silicon in a pattern on the surface and to form the tungsten deposit in the pattern in which the polycrystalline silicon had been deposited.