The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 1986

Filed:

Dec. 27, 1982
Applicant:
Inventors:

Leonard Nanis, Palo Alto, CA (US);

Angel Sanjurjo, San Jose, CA (US);

Assignee:

SRI International, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01J / ; C01B / ;
U.S. Cl.
CPC ...
422241 ; 2330 / ; 75 844 ; 266227 ; 422199 ; 422240 ; 423349 ; 423350 ;
Abstract

An apparatus for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (Na preferred) is carried out inside a reaction chamber. The chamber wall and bottom surfaces are formed of graphite and configured with drainage channels so as to facilitate the continuous separation of the products of reaction (Si and NaF) and removal of the molten salt by discharging the salt through one or more ports at the bottom of the reaction chamber. Such process is especially useful where it is desirable to discharge the reaction salt products from the reactor and retain silicon within the chamber for later removal.


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