The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1986
Filed:
Jun. 22, 1984
Applicant:
Inventors:
Hirokuni Namba, Osaka, JP;
Hajime Osaka, Osaka, JP;
Koichi Kamon, Osaka, JP;
Fuminori Higuchi, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156603 ; 156D / ; 156D / ; 156D / ; 423509 ;
Abstract
A process for preparing a large ZnSe single crystal, comprising vacuum sealing polycrystalline ZnSe prepared by a chemical vapor deposition in a capable and hot isostatically pressing polycrystalline ZnSe in the capsule, by which the ZnSe single crystal having such high qualities as to be used as a substrate on which an epitaxial layer of ZnSe can be grown.
Quick Actions:
Namba, Hirokuni. (1986). Process for preparing znse single crystal (U.S. Patent No. 4584053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4584053
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile