The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1986
Filed:
Jul. 25, 1984
Applicant:
Inventors:
Chung P Wu, Mercer, NJ (US);
George L Schnable, Lansdale, PA (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 148187 ; 148D / ; 357 91 ;
Abstract
A process of forming a low-dose ion implant of one or more of phosphorus, arsenic or boron is described. The desired impurity ion implant is preceded by an amorphizing implant of at least about 10.sup.15 ions/cm.sup.2 of fluorine ions. The implants are advantageously annealed at a temperature below about 800.degree. C.
Wu, Chung. (1986). Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with (U.S. Patent No. 4584026). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4584026
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile