The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1986
Filed:
Dec. 30, 1982
Applicant:
Inventor:
James J Rosenberg, Bronx, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 2312 ; 357 2315 ; 357 232 ; 357 16 ; 357 22 ;
Abstract
This invention relates to an improved heterojunction FET. More specifically the invention is directed to a heterojunction FET device in which the contact to the semiconductor gate is ohmic in character. The gate and channel regions of the FET have the same barrier height relative to an intervening third layer of semiconductor and sandwich the third layer of undoped semiconductor. The resulting symmetry of the structure provides a threshold voltage which lies normally near zero volts and is controllable upwardly or downwardly by adding an n or p type dopant to the undoped third layer or region.