The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1986
Filed:
Jan. 17, 1984
Applicant:
Inventor:
George L Schnable, Montgomery County, PA (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ; B32B / ; B32B / ; B32B / ;
U.S. Cl.
CPC ...
428209 ; 428210 ; 428901 ; 428701 ; 428427 ; 428428 ;
Abstract
Multilevel metallization structures in semiconductor devices are improved by utilizing a two- or three-layer dielectric system wherein the dielectric layers differ in flow temperature by at least 50.degree. and preferably 100.degree. C., so that one layer may be flowed without reflow or mutual dissolution with an underlying contacting dielectric layer. The first dielectric layer is phosphosilicate glass and the second is borophosphosilicate glass. A third layer is also borophosphosilicate glass differing in composition from the second so as to provide the required flow temperature differential.