The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 1986

Filed:

Apr. 09, 1979
Applicant:
Inventors:

Surinder Krishna, Schenectady, NY (US);

E Duane Wolley, Auburn, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 36 ;
Abstract

A gate turn-off (IGTO) thyristor having short turn-off times and high di/dt and dV/dt capabilities comprises an insulating layer overlying the inner region of the n2-emitter (cathode) region which includes a central region of greater resistivity than the n2-emitter cathode region for reducing turn-off current density of the device. The addition of an insulating layer and a central region of increased resistivity to the central portions of a base region of a bipolar transistor provides similar improved performance characteristics.


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