The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1986
Filed:
Mar. 20, 1981
Applicant:
Inventors:
Kiyoshi Morimoto, Mobara, JP;
Toshinori Takagi, Nagaokakyo, JP;
Assignee:
Futaba Denshi Kogyo K.K., Mobara, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2041 / ; 427 39 ; 427 86 ; 357-2 ;
Abstract
A process for forming an amorphous silicon film consisting of silicon (Si) and hydrogen (H) bonded in a monohydride state by a cluster ion beam deposition which comprises the step of impinging ionized and non-ionized silicon (Si) and hydrogen (H) upon a substrate within a vacuum chamber in which hydrogen is maintained at a pressure of about 10.sup.-2 Torr or less.