The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1986
Filed:
Jun. 08, 1984
Applicant:
Inventors:
L Rafael Reif, Brookline, MA (US);
Thomas J Donahue, Cambridge, MA (US);
Wayne R Burger, Belmont, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 2957 / ; 148D / ; 148D / ; 156612 ; 2041 / ; 2041 / ; 2041 / ; 427 39 ;
Abstract
A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800.degree. C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.