The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1986
Filed:
Nov. 21, 1983
Francois-Xavier Delaporte, Cagnes, FR;
Gerard M Lebesnerais, Perthes, FR;
Jean-Pierre Pantani, Nice, FR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A monolithically integrated resistive attenuator is autobiased from an input bipolar signal the amplitude of which is higher than the integrated circuit voltage supplies. The resistive attenuator is arranged in a first pocket formed in an epitaxial layer, and is connected between the input bipolar signal and ground. An intermediate tap produces an output signal. A diode and capacitor are formed in a second pocket. The diode is connected between the input bipolar signals and the epitaxial layer while the capacitor is connected between the epitaxial layer and the isolation walls thereof. The positive half-periods of the input bipolar signal charges the capacitor, which in turn biases the epitaxial layers. The attenuator, therefore, can be monolithically integrated into a silicon chip and remain isolated for all values of the input bipolar signal. The output signal produced by the attenuator is less than the integrated circuit voltage supplies so that the circuits driven by the output signal can be integrated without difficulties.