The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1986
Filed:
Jun. 22, 1983
Applicant:
Inventors:
Edward A Rezek, Redondo Beach, CA (US);
Lawrence M Zinkiewicz, West Hollywood, CA (US);
Assignee:
TRW Inc., Redondo Beach, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
148171 ; 2957 / ; 2956 / ; 148172 ; 156624 ;
Abstract
A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide. The high resistivity of the layer is achieved by doping it with a deep level dopant such as cobalt, in a concentration in the range of 0.6 to 1.0 atomic percent, and by purifying the growth solution to an impurity concentration of at most 1.times.10.sup.16 atoms per cubic centimeter.