The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1986
Filed:
Dec. 10, 1984
George F Hagner, Chandler, AZ (US);
Kothandaraman Ravindhran, Mesa, AZ (US);
GTE Communication Systems Corporation, Phoenix, AZ (US);
Abstract
In a 1.2 micron CMOS process, the gate oxide is formed by growing a 1000 Angstrom thickness of sacrificial oxide, immediately performing an oxide strip and then effecting a thin gate oxidation. The gate oxidation step is characterized by a temperature ramp from 700 to 950 degrees Centigrade in a flow of 9 liters per minute nitrogen and 0.36 liters per minute oxygen. At the 950 degrees Centigrade point, the nitrogen flow ceases and the oxygen flow increases to 9 liters per minute. The temperature is then downwardly ramped to 900 degrees Centigrade.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile