The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1986
Filed:
Apr. 13, 1982
Applicant:
Inventor:
G R Rao, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29578 ; 148-15 ; 148187 ; 148D / ; 357 51 ; 357 52 ; 357 91 ;
Abstract
A dynamic read/write memory device using one-transistor N-channel silicon gate type cells is made by a double-level polysilicon process in which the field oxide is of reduced thickness for the cell array, and of conventional thickness for peripheral circuits. This reduces moat encroachment in the critical cell portion, yet does not force performance compromises in the critical speed paths.