The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1986
Filed:
Jun. 29, 1984
Apparajan Ganesan, Indianapolis, IN (US);
Ronald A Morrison, Indianapolis, IN (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A CMOS circuit (10) for preventing overvoltage between two supply nodes (12,14) makes use of vertical NPN bipolar transistors (80,84) for their current-carrying capability. Zener diodes (16,18,20,22) and a resistor (24) generate a sensing voltage which is amplified by a vertical bipolar transistor (28) and coupled to one input of a comparator (40) which has the other input at a bias voltage node (52) of a voltage divider (54,56,58,60). The comparator output (50) is coupled to the input of a transimpedance transistor (72) which drives the input current of a current mirror (66,74). The output (78) of the current mirror turns on the current-carrying transistors (80,84). Positive feedback for latching is provided by connecting the common gates of the current mirror transistors to the gate of a feedback transistor (86) which has its current path connected between the one supply node and the base (26) of the first bipolar transistor. The vertical bipolar transistors (28,80,84) of the circuit include guard rings (37) of heavily doped material about the emitter (32) and base (34) regions at the surface and tied to the collector voltage.