The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1986
Filed:
Dec. 05, 1983
Kenneth R Whight, Horsham, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
In order to increase the breakdown voltage of a reverse-biased p-n junction of a semiconductor device, at least three annular regions which extend around the active device region are located within the spread of a depletion layer from the junction. At least one inner annular region is wider than outer annular regions, and this increased width of the inner region or regions reduces peak electrostatic fields found to occur at the bottom outer corners of the active device region and inner annular regions. The spacing of the annular regions increases with remoteness from the active device region, although at least two inner annular regions may have the same spacing as that of the innermost annular region from the active device region. A group of annular regions may have the same width as each other in the group.