The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1986
Filed:
Aug. 24, 1984
Leybold-Heraeus GmbH, Cologne, DE;
Abstract
Method for reactive vapor deposition of compounds of metals and semi-conductors on at least one substrate by glow discharge. Into a space between a magnetron cathode (1) with a target (5) and the substrate (11) an inert gas and a reaction gas for the formation of the desired compound with the target material are separately introduced. Two solve the problem of making it possible to maintain the vapor deposition process stable over long time periods, according to the invention, a flow restriction is introduced between the target (5) and the substrate (11) by a diaphragm (20), which amounts to at least 40% of the cross-section of the space. Further, the inert gas is fed between target (5) and aperture (20) at the periphery of the target. Moreover the reaction gas is fed to the mass flow through a distributor device (21) to one side of the diaphragm (20), and finally a glow discharge is also maintained in the region between diaphragm (20) and substrate (11) by means of an anode (25) exposed to the reaction gas arranged on the other side of the aperture.