The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1986
Filed:
Dec. 28, 1984
Grzegorz Kaganowicz, Belle Mead, NJ (US);
John W Robinson, Levittown, PA (US);
RCA Corporation, Princeton, NJ (US);
Abstract
It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.