The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1986
Filed:
Jun. 21, 1982
Applicant:
Inventors:
James A Benjamin, Waukesha, WI (US);
Robert W Lade, Fort Myers, FL (US);
Herman P Schutten, Milwaukee, WI (US);
Stanley V Jaskolski, Sussex, WI (US);
Assignee:
Eaton Corporation, Cleveland, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 238 ; 357 2314 ; 357 43 ; 357 55 ; 357 59 ; 357 86 ;
Abstract
Lateral FET structure is disclosed with an insulative region such as porous silicon filled with oxide formed in the drift region to divert the drift region current path and increase the length thereof to afford higher OFF state blocking voltage without increasing lateral dimensions. Combinations involving bidirectional power switching structures are also disclosed, as well as a multicell matrix array.