The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 1986

Filed:

Feb. 22, 1984
Applicant:
Inventors:

Tetsuji Arai, Tachikawa, JP;

Yoshiki Mimura, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F24H / ;
U.S. Cl.
CPC ...
219354 ; 219339 ; 219347 ; 148-15 ;
Abstract

A method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits selectively heating the region which is required to be heated, and, at the same time, to avoid any overheating of the region where no heating is required. The above heating method is particularly effective for annealing a semiconductor wafer which has a large surface area.


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