The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1986
Filed:
Dec. 12, 1983
Morinobu Endou, Nagano, JP;
Minoru Takamizawa, Tokyo, JP;
Tatsuhiko Hongu, Kanagawa, JP;
Taishi Kobayashi, Niigata, JP;
Akira Hayashida, Niigata, JP;
Nobuaki Urasato, Nagano, JP;
Hiromi Ohsaki, Niigata, JP;
Nichiro Suzuki, Fukui, JP;
Takasi Toide, Fukui, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.