The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 1986

Filed:

Sep. 27, 1982
Applicant:
Inventor:

Luis M Arzubi, Colchester, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365205 ; 365149 ;
Abstract

A circuit arrangement is described with a sense latch for increasing the number of dynamic FET storage cells on bit lines (BL) connected to this sense latch (SL). The storage cells proper are arranged in a semiconductor structure having a diffusion layer acting as a conductor and a multiple metal layer. The outputs of the sense latch (SL) are connected to two pairs of cross-coupled charge storge elements (BB) acting as bit line coupling transistors which are connected to extended partitioned bit line pairs (BL1, BL1', and BL2, BL2'). Each section has its own reference cells and is coupled to the sense latch (SL), the sections furthest from the sense latch are coupled through low-capacity metal lines, and charge coupling elements (BB). These metal sections of the bit lines meander over the surface of the semiconductor structure.


Find Patent Forward Citations

Arzubi, Luis. (1986). Fet storage with partitioned bit lines (U.S. Patent No. 4570241). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4570241

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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