The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Sep. 14, 1984
Applicant:
Inventors:
Alexander D Butherus, Lebanon, NJ (US);
Lucian A D'Asaro, Madison, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156654 ; 156662 ; 2041 / ; 252 791 ;
Abstract
The use of an anisotropic etchant containing BCl.sub.3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.
Butherus, Alexander. (1986). Method for plasma etching iii-v semiconductors with a bcl.sub.3 (U.S. Patent No. 4569718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4569718
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile