The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Jun. 07, 1984
Toshiyuki Terada, Kawasaki, JP;
Nobuyuki Toyoda, Yokohama, JP;
Akimichi Hojo, Yokohama, JP;
Kiyoho Kamei, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An etched SiO.sub.2 film component serving as a mask at the time of formation of source and drain electrodes in a surface layer of a GaAs substrate by means of ion implantation is side-etched before a gate electrode is formed. An SiO.sub.2 film component has a narrowed width smaller than a distance between the source and drain electrodes while the SiO.sub.2 film component supports a metal mask patterned film at its top surface. The SiO.sub.2 film component is replaced with a metal layer serving as a gate of a self-aligned Schottky gate FET. According to this method, a metal with high heat resistance need not be used as a metal material of the gate layer.