The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1986
Filed:
Oct. 31, 1983
Applicant:
Inventor:
Alvin M Goodman, Princeton, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
3241 / ; 3241 / ;
Abstract
The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (I.sub.o) versus reciprocal absorption coefficient (.alpha..sup.-1) in upward-facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.