The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1986
Filed:
Mar. 27, 1984
Hiroyuki Ikezi, San Diego, CA (US);
Richard L Freeman, Del Mar, CA (US);
GA Technologies Inc., San Diego, CA (US);
Abstract
A method for judging whether a group of semiconductor devices have sufficiently short carrier lifetimes to make them suitable for use in high speed electronic circuitry. A determination is made as to the satisfactory carrier lifetime for a pn junction in the devices. A capacitance value representative of the pn junction, when reverse biased, is also determined. The pn junction is placed in series with an inductor sized so that the resonant frequency of the inductor and the pn junction, when reversely biased, is substantially equal to the reciprocal of the carrier lifetime. An oscillating voltage is applied to the series combination of the junction and the inductor, the voltage having a fundamental frequency near but above the resonant frequency and an amplitude greater than a predetermined level which is in the range of 3-5 volts. Finally, the device under test is rejected should an output taken across the pn junction show a substantial frequency component below the fundamental frequency.