The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1986
Filed:
Feb. 01, 1984
Applicant:
Inventor:
Kenji Maeguchi, Yokohama, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; H01L / ;
U.S. Cl.
CPC ...
430312 ; 430314 ; 430317 ; 430318 ; 430329 ; 430330 ; 427 38 ; 148187 ; 2957 / ;
Abstract
Disclosed is a method for manufacturing a semiconductor device which comprises a process for forming a positive-type resist film and a negative-type resist film on a semiconductor substrate, a process for exposing predetermined regions of both resist films to radiation, a process for developing the upper resist film to form a first resist pattern adapted to be used as a mask for ion-implantation, a process for developing the lower resist film to form a second resist pattern opposite to the first resist pattern after peeling off the first resist pattern, and a process for treatment the semiconductor substrate using the second resist pattern as a mask.