The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1986
Filed:
May. 22, 1984
Kazuhide Saigo, Tokyo, JP;
Masayoshi Suzuki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A polymer having allyl groups each attached to a silicon atom serves as a resist material which is highly resistive to dry etching such as reactive sputter etching with oxygen and sensitive to electron beams, X-rays and deep UV rays. By the addition of a bis-azide compound known as a photosensitive cross-linking agent the resist material becomes sensitive also to UV and near UV rays. A very suitable polymer is obtained by polymerizing either a triallylsilane or an allylsilylstyrene or by copolymerizing an allylsilylstyrene with another ethylenic compound copolymerizable with styrene. This resist material is used in a pattern forming method of the two-layer type, in which a fine pattern is generated in a thin film of the resist material by lithography and then transferred into an underlying thick organic layer by dry etching of the thick organic layer with the resist pattern as a mask.