The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1986
Filed:
Apr. 04, 1984
Applicant:
Inventors:
Hiroyuki Sakai, Moriguchi, JP;
Toyoki Takemoto, Yawata, JP;
Kenji Kawakita, Hirakata, JP;
Tsutomu Fujita, Hirakata, JP;
Atsuko Akiyama, Kobe, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29591 ; 2957 / ; 29578 ; 148174 ; 148175 ; 148188 ; 148D / ; 148D / ; 148D / ; 357 34 ; 357 59 ;
Abstract
Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h.sub.FE and enabling a shallow emitter junction.